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Preliminary Datasheet RO-P-DS-3084 A
2.0-18.0 GHz Distributed Amp/Gain Block
MAAMGM0007-DIE
MAAMGM0007-DIE
Features

0.15 Watt Saturated Output Power Level Single Bias Operation Variable Drain Voltage (4-6V) Operation GaAs MSAGTM Process Proven Manufacturability and Reliability
No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility
Description
The MAAMGM0007-DIE is a single stage distributed amplifier with single bias operation. This product is fully matched to 50 ohms on both the input and output. It can be used as a driver stage in high power applications. Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM's MSAGTM process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging.
Primary Applications
Test Equipment Electronic Warfare Radar
Electrical Characteristics: TB = 40C1, Z0 = 50, VDD = 5V, Pin = 16 dBm
Parameter Bandwidth Output Power 1-dB Compression Point Small Signal Gain Noise Figure Input VSWR Output VSWR Drain Supply Current Symbol f POUT P1dB G NF VSWR VSWR IDD Typical 2.0-18.0 22 19 8 6 2.0:1 2.0:1 < 250 mA Units GHz dBm dBm dB dB
1.
TB = MMIC Base Temperature
RO-P-DS-3084 A
2/6
2.0-18.0 GHz Distributed Amp/Gain Block Maximum Operating Conditions 2
Parameter Input Power Drain Supply Voltage Junction Temperature Storage Temperature Die Attach Temperature Symbol PIN VDD TJ TSTG
MAAMGM0007-DIE
Absolute Maximum 20.0 +8.0 180 -55 to +150 310
Units dBm V C C C
2. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic Drain Supply Voltage Input Power Junction Temperature Thermal Resistance MMIC Base Temperature Symbol VDD PIN TJ JC TB 58 Note 3 Min 4.0 Typ 5.0 16.0 Max 6.0 18.0 150 Unit V dBm C C/W C
3. Maximum MMIC Base Temperature = 150C --JC* VDD * IDD
Operating Instructions
This device is static sensitive. Please handle with care.
Specifications subject to change without notice.
2
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
RO-P-DS-3084 A
3/6
2.0-18.0 GHz Distributed Amp/Gain Block
MAAMGM0007-DIE
50 45 40 4V 5V 6V
20 SSG Input VSWR Output VSWR 16
6
5
Output Power (dBm)
35 30 25 20 15 10 5 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1 4 2 12 4
Gain (dB)
8
3
Frequency (GHz) Figure 1. Output Power vs. Frequency and Drain Voltage at Pin=16dBm.
Frequency (GHz) Figure 2. Small Signal Gain and Input and Output VSWR vs. Frequency at VD=5V
50 45 40 35 30 25 20 15 10 5 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 4V 5V 6V
50 45 40 35 30 25 20 15 10 5 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
4V 5V 6V
17
18
Frequency (GHz) Figure 3. Saturated Output Power vs. Frequency and Drain Voltage.
Frequency (GHz) Figure 4. 1dB Compression Point vs. Frequency and Drain Voltage.
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
VSWR
RO-P-DS-3084 A
4/6
2.0-18.0 GHz Distributed Amp/Gain Block
MAAMGM0007-DIE
30 27 24 2GHz 6GHz 10GHz 15GHz 18GHz
1.0 2GHz 6GHz 10GHz 0.8 15GHz 18GHz
Output Power (dBm)
21 18 15 12 9 6 3 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
0.6
0.4
0.2
0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Input Power (dBm) Figure 5. Output Power vs. Input Power and Frequency at VD=5V.
Input Power (dBm) Figure 6. RF Drain Current vs. Input Power and Frequency at VD=5V.
14
4V Gain 4V NF
5V Gain 5V NF
6V Gain 6V NF
14
12
12
10
10
8
8
6
6
4
4
2
2
0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
0
Frequency (GHz) Figure 7. Small Signal Gain and Noise Figure vs. Frequency and Drain Voltage.
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
RO-P-DS-3084 A
5/6
2.0-18.0 GHz Distributed Amp/Gain Block
MAAMGM0007-DIE
Mechanical Information
Chip Size: 1.67 x 3.00 x 0.075 mm
(65
x 118 x 3 mils)
3.000mm
0.817mm
0.162mm
1.503mm
GND:G
VD_5
VD_6 VD_7 VD_8
1.217mm
1.417mm
1.617mm
GND:G
GND:G
1.665mm 1.558mm
GND:G
GND:G OUT GND:G
GND:G
GN D:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
0.367mm
IN
GND:G
GND:G GND :G
0 0
2.838mm
Figure 8. Die Layout
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Bond Pad Dimensions
Pad RF In and Out 5 Volt Supply: VD_5 6 Volt Supply: VD_6 7 Volt Supply: VD_7 8 Volt Supply: VD_8 Size (m) 150 x 150 150 x 150 100 x 100 100 x 100 100 x 100 Size (mils) 6x6 6x6 4x4 4x4 4x4
Specifications subject to change without notice.
5
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
G DN G :
G DN G :
G DN G :
GN D:G
0.907mm
RO-P-DS-3084 A
6/6
2.0-18.0 GHz Distributed Amp/Gain Block
MAAMGM0007-DIE
VDD
0.1 F
100 pF
VD_5
VD_6
VD_7
VD_8
GND:G
GND :G
GND:G
GND :G
GND:G OUT GND:G
GND:G
RFIN
GND:G
GN D:G
G ND :G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
IN
GND:G
GND:G GND :G
Figure 9. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW testing. Refer to table below for bonding to achieve desired operation.
Drain Voltage to Pad Connection 5 Volt Supply: VD_5
Applied Voltage (Volts) 4 5 6 6 7 8
Operational Voltage (Volts) 4 5 6 5 5 5
6 Volt Supply: VD_6 7 Volt Supply: VD_7 8 Volt Supply: VD_8
Assembly Instructions: Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 C to less than 5 minutes. Wirebonding: Bond @ 160 C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable.
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
G DN G :
G DN G :
G DN G :
GND:G
RFOUT
GN D:G

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